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| NTTD1P02R2 Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8t Package http://onsemi.com Features * * * * * * * Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual Micro8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided Pb-Free Package is Available -1.45 AMPERES -20 VOLTS 160 mW @ VGS = -4.5 Dual P-Channel D Applications * Power Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones G S MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Pulsed Drain Current (Note 3) Thermal Resistance - Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Pulsed Drain Current (Note 3) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = -20 Vdc, VGS = -4.5 Vdc, Peak IL = -3.5 Apk, L = 5.6 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol VDSS VGS RqJA PD ID ID IDM RqJA PD ID ID IDM TJ, Tstg EAS Value -20 "8.0 250 0.50 -1.45 -1.15 -10 125 1.0 -2.04 -1.64 -16 -55 to +150 35 Unit V V C/W W A A A C/W W A A A C mJ 8 1 Micro8 CASE 846A STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT D1 D1 D2 D2 8 WW BCG G 1 S1 G1 S2 G2 = Specific Device Code = Work Week = Pb-Free Package BC WW G (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Micro8 Micro8 (Pb-Free) Shipping 4000/Tape & Reel 4000/Tape & Reel TL 260 C NTTD1P02R2 NTTD1P02R2G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR-4 or G-10 PCB, Steady State. 2. Mounted onto a 2" square FR-4 Board (1 in sq, 2 oz Cu 0.06 thick single sided), Steady State. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 2 1 Publication Order Number: NTTD1P02R2/D NTTD1P02R2 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Note 4) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = -250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = -20 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = -20 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = -8 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +8 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 mAdc) Temperature Coefficient (Negative) Static Drain-to-Source On-State Resistance (VGS = -4.5 Vdc, ID = -1.45 Adc) (VGS = -2.7 Vdc, ID = -0.7 Adc) (VGS = -2.5 Vdc, ID = -0.7 Adc) Forward Transconductance (VDS = -10 Vdc, ID = -0.7 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BODY-DRAIN DIODE RATINGS (Note 5) Diode Forward On-Voltage (IS = -1.45 Adc, VGS = 0 Vdc) (IS = -1.45 Adc, VGS = 0 Vdc, TJ = 125C) (IS = -1.45 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 4. Handling precautions to protect against electrostatic discharge are mandatory. 5. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 6. Switching characteristics are independent of operating junction temperature. VSD - - - - - - -0.91 -0.72 25 13 12 0.015 -1.1 - - - - - mC Vdc (VDS = -16 Vdc, VGS = -4.5 Vdc, ID = -1.45 Adc) (VDD = -16 Vdc, ID = -0.7 Adc, VGS = -4.5 Vdc, RG = 6.0 W) (VDD = -16 Vdc, ID = -1.45 Adc, VGS = -4.5 Vdc, RG = 6.0 W) (VDS = -16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss td(on) tr td(off) tf td(on) tr td(off) tf Qtot Qgs Qgd - - - - - - - - - - - - - - 265 100 60 10 25 30 25 10 20 30 20 5.0 1.5 2.0 - - - - - - - - - - - 10 - - nC ns ns pF VGS(th) -0.7 - - - - - -0.95 2.3 0.130 0.175 0.190 2.5 -1.4 - 0.160 0.250 - - Vdc V(BR)DSS -20 - - - - - - -12 - - - - - - -1.0 -10 -100 100 Vdc mV/C mAdc Symbol Min Typ Max Unit IDSS IGSS IGSS nAdc nAdc RDS(on) W gFS Mhos SWITCHING CHARACTERISTICS (Notes 5 & 6) Reverse Recovery Time trr ta tb QRR ns http://onsemi.com 2 NTTD1P02R2 3 -2.7 V -2.9 V -3.1 V -3.3 V -3.7 V -4.5 V 2 -8 V -1.9 V 1 -1.7 V VGS = -1.5 V 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 -2.5 V 3 TJ = 25C -ID, DRAIN CURRENT (AMPS) -2.3 V VDS -10 V -ID, DRAIN CURRENT (AMPS) -2.1 V 2 1 TJ = 100C TJ = 25C TJ = -55C 0 0 0.5 1 1.5 2 2.5 3 3.5 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.4 0.3 TJ = 25C VGS = -2.5 V VGS = -2.7 V 0.1 VGS = -4.5 V 0.3 ID = -1.45 A TJ = 25C 0.2 0.2 0.1 0 0 2 4 6 8 10 12 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0 0 0.5 1 1.5 2 2.5 3 3.5 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1 0.8 0.6 -50 ID = -1.45 A VGS = -4.5 V 100 VGS = 0 V TJ = 125C -IDSS, LEAKAGE (nA) 10 TJ = 100C -25 0 25 75 50 100 125 TJ, JUNCTION TEMPERATURE (C) 150 1 4 8 12 16 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 20 Figure 5. On-Resistance Variation with Temperature http://onsemi.com 3 Figure 6. Drain-to-Source Leakage Current versus Voltage NTTD1P02R2 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 800 Ciss C, CAPACITANCE (pF) 600 Crss 5 20 18 16 -VGS Q1 2 1 0 -VDS ID = -1.45 A TJ = 25C 3 4 5 6 Q2 14 12 10 8 6 4 2 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 VDS = 0 V VGS = 0 V TJ = 25C QT 4 3 400 Ciss 200 Coss 0 Crss 10 5 0 -VGS -VDS 5 10 15 20 0 1 2 Qg, TOTAL GATE CHARGE (nC) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge Figure 7. Capacitance Variation 100 -IS, SOURCE CURRENT (AMPS) VDD = -16 V ID = -1.45 A VGS = -4.5 V t, TIME (ns) 1.6 VGS = 0 V TJ = 25C 1.2 10 td (off) tf td (on) tr 0.8 0.4 0 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.4 0.5 0.6 0.7 0.8 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 ID , DRAIN CURRENT (AMPS) Figure 10. Diode Forward Voltage versus Current 10 VGS = 8 V SINGLE PULSE TC = 25C 100 ms 1 ms di/dt IS trr ta tb TIME tp 0.25 IS IS dc 10 100 1 10 ms 0.1 0.01 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 12. Diode Reverse Recovery Waveform Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTTD1P02R2 TYPICAL ELECTRICAL CHARACTERISTICS 1000 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (C/W) D = 0.5 0.2 0.1 0.05 0.02 0.01 100 10 P(pk) 1 SINGLE PULSE 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 t, TIME (s) t2 DUTY CYCLE, D = t1/t2 1.0E+00 t1 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0E+01 1.0E+02 1.0E+03 Figure 13. Thermal Response http://onsemi.com 5 NTTD1P02R2 PACKAGE DIMENSIONS Micro8t CASE 846A-02 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A-01 OBSOLETE, NEW STANDARD 846A-02. DIM A A1 b c D E e L HE STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. MILLIMETERS NOM MAX -- 1.10 0.08 0.15 0.33 0.40 0.18 0.23 3.00 3.10 3.00 3.10 0.65 BSC 0.40 0.55 0.70 4.75 4.90 5.05 MIN -- 0.05 0.25 0.13 2.90 2.90 SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 INCHES NOM -- 0.003 0.013 0.007 0.118 0.118 0.026 BSC 0.016 0.021 0.187 0.193 MIN -- 0.002 0.010 0.005 0.114 0.114 MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199 HE E PIN 1 ID e b 8 PL 0.08 (0.003) M TB S A S -T- SEATING PLANE 0.038 (0.0015) A1 A c L SOLDERING FOOTPRINT* 8X 1.04 0.041 0.38 0.015 8X 3.20 0.126 4.24 0.167 5.28 0.208 6X 0.65 0.0256 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Micro8 is a registered trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTTD1P02R2/D |
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